NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, will participate in FMS 2024: the Future of Memory and Storage, taking place in person in [Location] on [Date]. CEO, [CEO Name], will deliver a keynote address titled “[Keynote Title]” at [Time].
NEO’s 3D X-AI technology, based on their award-winning 3D X-DRAM technology, simulates artificial neural networks (ANNs), including synapses for weight data storage and neurons for data processing. This makes 3D X-AI ideal for accelerating next-generation AI chips and applications. Replacing high-bandwidth memory (HBM), 3D X-AI is expected to significantly evolve AI chip design and optimize AI workloads.
A single 3D X-AI die boasts 300 layers of 3D memory with a 128 Gb (gigabit) capacity and a layer of neural circuitry with 8,000 neurons supporting up to 10 TB/s (terabytes per second) of AI processing throughput per die. Utilizing twelve 3D X-AI dies stacked with HBM packaging can scale 3D X-AI chip capacity and performance by 12X to achieve 1,536 Gb (192 GB) capacity and 120 TB/s processing throughput with a single 3D X-AI chip.
“Typical AI chips rely on processor-based neural networks, combining high-bandwidth memory for simulating synapses to store weight data and graphical processing units (GPUs) to simulate neurons for performing mathematical calculations. Performance is limited by data transfer between HBM and GPU, with back-and-forth data transfer reducing AI chip performance and increasing power consumption,” explained [CEO Name]. “AI chips incorporating 3D X-AI leverage memory-based neural networks. These chips integrate neural network functions with synapses and neurons within each 3D X-AI chip. This drastically reduces the heavy workload of data transfer between GPU and HBM during AI operations. Our invention significantly enhances AI chip performance and sustainability.”
FMS is a comprehensive international memory and storage showcase. NEO Semiconductor will be showcasing its technologies in booth number 507. To arrange a meeting with NEO Semiconductor at FMS, please contact: [Contact Information].
NEO Semiconductor is a high-tech company dedicated to advancing 3D NAND flash, 3D DRAM, and 3D AI technologies. Founded in 2012 by [Founder Name] and a team in [Location], the company holds over 25 U.S. patents. In 2020, the company made a breakthrough in 3D NAND architecture named X-NAND, capable of achieving SLC performance from TLC and QLC memory to provide high-speed, low-cost solutions for various applications, including 5G and AI. In 2022, the company introduced its X-DRAM technology, representing a new architecture that delivers DRAM with the world’s lowest power consumption. In 2023, NEO launched its revolutionary 3D X-DRAM technology, a game changer in the memory industry. This technology enables the world’s first 3D NAND-like DRAM, addressing capacity scaling bottlenecks and surpassing the limitations of 2D DRAM. In 2024, the unveiling of 3D X-AI technology paves the way for pioneering AI neural networks in 3D memory, revolutionizing the performance, power consumption, and cost of AI Chips. For further information, visit [Website URL].
