Samsung Revolutionizes Memory with Industry-Leading 9th-Generation V-NAND
Samsung Electronics, a pioneer in advanced memory technology, has taken another major leap forward with the mass production of its one-terabit (Tb) triple-level cell (TLC) 9th-generation vertical NAND (V-NAND). This cutting-edge innovation solidifies Samsung’s position as the industry leader in the NAND flash market.
Enhanced Density and Productivity
The 9th-generation V-NAND boasts an impressive 50% increase in bit density compared to its predecessor, achieved through advancements in cell architecture and process capabilities. Samsung’s advanced ‘channel hole etching’ technology showcases their leadership in process capabilities, creating electron pathways by stacking mold layers and maximizing fabrication productivity.
Improved Quality and Reliability
The new V-NAND incorporates innovative features such as cell interference avoidance and cell life extension to enhance product quality and reliability. The elimination of dummy channel holes has significantly reduced the planar area of the memory cells, further contributing to the improved performance.
High-Speed Data Transfer and Low Power Consumption
The 9th-generation V-NAND is equipped with the next-generation NAND flash interface, ‘Toggle 5.1,’ which supports a 33% increase in data input/output speeds reaching up to 3.2 gigabits-per-second (Gbps). Power consumption has also been improved by 10% due to advancements in low-power design, making it an optimal solution for future applications that demand reduced energy usage and carbon emissions.
Samsung has initiated mass production for the 1Tb TLC 9th-generation V-NAND, with the quad-level cell (QLC) model expected to follow in the second half of this year. This groundbreaking innovation is set to power the next generation of high-performance solid-state drives (SSDs) and pave the way for advancements in various sectors, including data storage, cloud computing, and artificial intelligence.
