SK hynix has announced its participation in FMS 2024, a global semiconductor memory event taking place in Santa Clara, California. The company plans to showcase its latest advancements in memory technologies and products, while also presenting its “future visions” for the rapidly evolving AI space. FMS, previously known as the Flash Memory Summit, has rebranded this year to encompass a wider range of participants, including DRAM and storage providers, reflecting the escalating demand for AI hardware. SK hynix will be delivering a keynote speech at FMS 2024 next week, aiming to solidify its position as a leader in AI memory solutions. The company will build upon its accomplishments, including the recent announcement of the industry’s highest 321-layer NAND, which was unveiled at last year’s FMS. The keynote presentation will be led by Chunsung Kim, Head of SSD PMO, and Head of HBM Process Integration at SK hynix. They will delve into the company’s DRAM and NAND product portfolios, focusing on the AI-optimized memory solutions designed for AI implementation. SK hynix is teasing the unveiling of samples of its next-generation AI memory products, including the 12-layer HBM3E, scheduled for mass production in Q3 2024, and the 321-high NAND, slated for shipment in the first half of 2025. The company will also present customer systems showcasing its flagship products, underscoring the strong partnerships it has established with leading technology companies. Justin Kim, President and Head of AI Infra at SK hynix, emphasized the growing importance of memory solutions in the burgeoning AI era. He stated that the need for integrated solutions, combining multiple products to boost performance, is outweighing the significance of individual DRAM and NAND products. At FMS, SK hynix aims to demonstrate its competitive edge and technological leadership in the global market.
SK hynix to Showcase AI Memory Solutions at FMS 2024
