SK hynix has made a significant stride in the memory industry by announcing the development of the world’s first 1c DDR5. This breakthrough is the result of the company’s relentless pursuit of miniaturization and optimization in memory technology. The 1c DDR5, built using SK hynix’s sixth-generation 10nm process, marks a substantial leap in scaling down memory technology, bringing it closer to the 10nm threshold.
The company highlights that the challenges in shrinking the DRAM process to the 10nm range have grown exponentially with each generation. However, SK hynix’s dedication to technological advancement has allowed them to overcome these hurdles. Their industry-leading 1b process, the fifth generation of their 10nm technology, provided the foundation for this breakthrough. Through meticulous design and optimization, they have achieved a level of completion that allows them to lead the industry in this crucial area.
Kim Jonghwan, Head of DRAM Development at SK hynix, expressed the company’s commitment to delivering high-performance and cost-effective memory solutions. He emphasized that the 1c technology, with its impressive capabilities, will be integrated into their next-generation products, including HBM, LPDDR6, and GDDR7.
SK hynix’s commitment to innovation and its relentless drive to push the boundaries of memory technology have once again solidified their position as a leader in the DRAM space. With the development of the 1c DDR5, the company aims to be at the forefront of the evolving memory landscape, providing cutting-edge solutions that power the future of AI and computing.
