Samsung Unveils Industry-Leading 9th-Generation V-NAND with Enhanced Density and Productivity

Samsung Electronics, the global leader in memory technology, has commenced mass production of its one-terabit (Tb) triple-level cell (TLC) 9th-generation vertical NAND (V-NAND), solidifying its dominance in the NAND flash market. This groundbreaking innovation boasts a 50% increase in bit density compared to its predecessor, achieved through advanced ‘channel hole etching’ technology that enhances the productivity of the V-NAND’s double-stack structure.

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